Contents
In this course an introduction to the fundamental aspects of semiconductor physics is given, with the main emphasis on a description of the electrical properties of semiconductors and how these are exploited in microelectronic devices.
Semiconductor in equilibrium
Intrinsic semiconductor
donors and acceptors and energy levels
Extrinsic semiconductor
Statistics for donors and acceptors
Temperatur and impurity dependence of the Fermi level.
Transport of carriers
Carrier drift
Carrier diffusion
The Einstein relation
Hall effect
Carriers in non-equilibrium
Carrier generation and recombination
Quasi-Fermi energy levels
Excess-carrier lifetime
Surface effects
pn-junction
Zero bias
Reverse bias
I-V relationship
Generation recombination currents
Junction breakdown
Diode transients
Solar cells
Metal-semiconductor and semiconductor hetero junctions
Schottky barrier diode
Ohmic contacts
Heterojunctions
Bipolar transistor
The transistor action
minority carrier distribution
Base current gain
Frequency limitations
MOSFET
The two-terminal MOS structure
C-V relationship
The basic MOSFET operation
Frequency limitations.
Literature
Donald A. Neaman, Semiconductor physics and devices-basic principles, Irwing Book Team, Boston, 1997.
Lecturer
Brian Bech Nielsen
Evaluation and grading system
Oral exam, evaluated by 13-scale, internal marking.
ECTS credits
5 ECTS.
Quarter
3rd and 4th quarter, spring 2004.